KSC2335RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSC2335RTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1.5W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 1A 5V
Current - Collector Cutoff (Max)
10μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
7A
RoHS Status
ROHS3 Compliant
KSC2335RTU Product Details
KSC2335RTU Overview
In this device, the DC current gain is 20 @ 1A 5V, which is the ratio between the base current and the collector current.When VCE saturation is 1V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).This device displays a 400V maximum voltage - Collector Emitter Breakdown.
KSC2335RTU Features
the DC current gain for this device is 20 @ 1A 5V the vce saturation(Max) is 1V @ 600mA, 3A
KSC2335RTU Applications
There are a lot of Rochester Electronics, LLC KSC2335RTU applications of single BJT transistors.