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KSD880Y

KSD880Y

KSD880Y

ON Semiconductor

KSD880Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD880Y Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Voltage - Rated DC 60V
Max Power Dissipation 30W
Current Rating 3A
Frequency 3MHz
Base Part Number KSD880
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 30W
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
hFE Min 60
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.140135 $0.140135
10 $0.132203 $1.32203
100 $0.124720 $12.472
500 $0.117660 $58.83
1000 $0.111000 $111
KSD880Y Product Details

KSD880Y Overview


In this device, the DC current gain is 100 @ 500mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 7V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.As a result, the part has a transition frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

KSD880Y Features


the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz

KSD880Y Applications


There are a lot of ON Semiconductor KSD880Y applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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