KSD880Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD880Y Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Voltage - Rated DC
60V
Max Power Dissipation
30W
Current Rating
3A
Frequency
3MHz
Base Part Number
KSD880
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Power Dissipation
30W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 5V
Current - Collector Cutoff (Max)
100μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 300mA, 3A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
400mV
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
7V
hFE Min
60
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.140135
$0.140135
10
$0.132203
$1.32203
100
$0.124720
$12.472
500
$0.117660
$58.83
1000
$0.111000
$111
KSD880Y Product Details
KSD880Y Overview
In this device, the DC current gain is 100 @ 500mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 7V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.As a result, the part has a transition frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
KSD880Y Features
the DC current gain for this device is 100 @ 500mA 5V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 1V @ 300mA, 3A the emitter base voltage is kept at 7V the current rating of this device is 3A a transition frequency of 3MHz
KSD880Y Applications
There are a lot of ON Semiconductor KSD880Y applications of single BJT transistors.