KSD882YSTU Overview

In this device, the DC current gain is 160 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.90MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

KSD882YSTU Features

the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz

KSD882YSTU Applications

There are a lot of ON Semiconductor KSD882YSTU applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting