NSV60600MZ4T3G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1A 2V.A VCE saturation (Max) of 350mV @ 600mA, 6A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.The maximum collector current is 6A volts.

NSV60600MZ4T3G Features

the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 350mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

NSV60600MZ4T3G Applications

There are a lot of ON Semiconductor NSV60600MZ4T3G applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver