PMBT5550,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMBT5550,235 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
PMBT5550
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
140V
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
6V
VCEsat-Max
0.25 V
Collector-Base Capacitance-Max
6pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.411511
$7.411511
10
$6.991991
$69.91991
100
$6.596219
$659.6219
500
$6.222848
$3111.424
1000
$5.870611
$5870.611
PMBT5550,235 Product Details
PMBT5550,235 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 300mA volts.
PMBT5550,235 Features
the DC current gain for this device is 60 @ 10mA 5V the vce saturation(Max) is 250mV @ 5mA, 50mA the emitter base voltage is kept at 6V a transition frequency of 100MHz
PMBT5550,235 Applications
There are a lot of Nexperia USA Inc. PMBT5550,235 applications of single BJT transistors.