KSE13003H1AS Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 9 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 500mA, 1.5A.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Device displays Collector Emitter Breakdown (400V maximal voltage).
KSE13003H1AS Features
the DC current gain for this device is 9 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
a transition frequency of 4MHz
KSE13003H1AS Applications
There are a lot of ON Semiconductor KSE13003H1AS applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
