Welcome to Hotenda.com Online Store!

logo
userjoin
Home

KSE2955TTU

KSE2955TTU

KSE2955TTU

ON Semiconductor

KSE2955TTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSE2955TTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 600mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 10A
Frequency - Transition 2MHz
KSE2955TTU Product Details

KSE2955TTU Overview


This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the base current and the collector current.When VCE saturation is 8V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-220-3 supplier package.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.

KSE2955TTU Features


the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 8V @ 3.3A, 10A
the supplier device package of TO-220-3

KSE2955TTU Applications


There are a lot of ON Semiconductor KSE2955TTU applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

Related Part Number

PZTA14/ZLF
PZTA14/ZLF
$0 $/piece
S9012-H-AP
2SD1207U
2SD1207U
$0 $/piece
KSD471A-Y-BP
SMMBT2369LT1G
MPSH24
JAN2N918
2SA1577-P-AP

Get Subscriber

Enter Your Email Address, Get the Latest News