KSE2955TTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSE2955TTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
600mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
10A
Frequency - Transition
2MHz
KSE2955TTU Product Details
KSE2955TTU Overview
This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the base current and the collector current.When VCE saturation is 8V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-220-3 supplier package.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
KSE2955TTU Features
the DC current gain for this device is 20 @ 4A 4V the vce saturation(Max) is 8V @ 3.3A, 10A the supplier device package of TO-220-3
KSE2955TTU Applications
There are a lot of ON Semiconductor KSE2955TTU applications of single BJT transistors.