MPSH24 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPSH24 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Additional Feature
LOW NOISE
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 8mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
50mA
Transition Frequency
400MHz
Frequency - Transition
400MHz
Highest Frequency Band
VERY HIGH FREQUENCY B
Collector-Base Capacitance-Max
0.36pF
RoHS Status
ROHS3 Compliant
MPSH24 Product Details
MPSH24 Overview
This device has a DC current gain of 30 @ 8mA 10V, which is the ratio between the base current and the collector current.As a result, the part has a transition frequency of 400MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
MPSH24 Features
the DC current gain for this device is 30 @ 8mA 10V a transition frequency of 400MHz
MPSH24 Applications
There are a lot of Rochester Electronics, LLC MPSH24 applications of single BJT transistors.