KSH122ITU Overview
This device has a DC current gain of 1000 @ 4A 4V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V allows maximum design flexibility.When VCE saturation is 4V @ 80mA, 8A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.Maximum collector currents can be below 8A volts.
KSH122ITU Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
KSH122ITU Applications
There are a lot of ON Semiconductor KSH122ITU applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
