KSH122TF Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 4V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a breakdown input voltage of 100V volts that it can take.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
KSH122TF Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
KSH122TF Applications
There are a lot of ON Semiconductor KSH122TF applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
