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KSH210TM

KSH210TM

KSH210TM

ON Semiconductor

KSH210TM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSH210TM Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 1.4W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number KSH210
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Power - Max 1.4W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage 25V
Transition Frequency 65MHz
Max Breakdown Voltage 25V
Frequency - Transition 65MHz
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -8V
hFE Min 45
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.322155 $0.322155
10 $0.303920 $3.0392
100 $0.286717 $28.6717
500 $0.270488 $135.244
1000 $0.255177 $255.177
KSH210TM Product Details

KSH210TM Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 45 @ 2A 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at -8V for high efficiency.There is a transition frequency of 65MHz in the part.Input voltage breakdown is available at 25V volts.Maximum collector currents can be below 5A volts.

KSH210TM Features


the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
a transition frequency of 65MHz

KSH210TM Applications


There are a lot of ON Semiconductor KSH210TM applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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