KSH210TM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSH210TM Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 6 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Max Power Dissipation
1.4W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
KSH210
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Power - Max
1.4W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1.8V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 2A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage
25V
Transition Frequency
65MHz
Max Breakdown Voltage
25V
Frequency - Transition
65MHz
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-8V
hFE Min
45
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.322155
$0.322155
10
$0.303920
$3.0392
100
$0.286717
$28.6717
500
$0.270488
$135.244
1000
$0.255177
$255.177
KSH210TM Product Details
KSH210TM Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 45 @ 2A 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at -8V for high efficiency.There is a transition frequency of 65MHz in the part.Input voltage breakdown is available at 25V volts.Maximum collector currents can be below 5A volts.
KSH210TM Features
the DC current gain for this device is 45 @ 2A 1V the vce saturation(Max) is 1.8V @ 1A, 5A the emitter base voltage is kept at -8V a transition frequency of 65MHz
KSH210TM Applications
There are a lot of ON Semiconductor KSH210TM applications of single BJT transistors.