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BD17510STU

BD17510STU

BD17510STU

ON Semiconductor

BD17510STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD17510STU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 30W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 3A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 30W
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 45V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 800mV
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.796064 $1.796064
10 $1.694400 $16.944
100 $1.598491 $159.8491
500 $1.508010 $754.005
1000 $1.422651 $1422.651
BD17510STU Product Details

BD17510STU Overview


DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 800mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.A maximum collector current of 3A volts can be achieved.

BD17510STU Features


the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz

BD17510STU Applications


There are a lot of ON Semiconductor BD17510STU applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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