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MJD350-13

  • MJD350-13
  • MJD350-13

MJD350-13

MJD350-13

Diodes Incorporated

MJD350-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MJD350-13 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.39037mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.56W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.56W
Case Connection COLLECTOR
Power - Max 15W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 100μA ICBO
Collector Emitter Breakdown Voltage 300V
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 3V
hFE Min 30
Height 2.4mm
Length 6.8mm
Width 6.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.916440 $0.91644
10 $0.864566 $8.64566
100 $0.815628 $81.5628
500 $0.769461 $384.7305
1000 $0.725906 $725.906
MJD350-13 Product Details

MJD350-13 Overview


In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 500mA volts.

MJD350-13 Features


the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 3V

MJD350-13 Applications


There are a lot of Diodes Incorporated MJD350-13 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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