MJD350-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MJD350-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.39037mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.56W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.56W
Case Connection
COLLECTOR
Power - Max
15W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
100μA ICBO
Collector Emitter Breakdown Voltage
300V
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
3V
hFE Min
30
Height
2.4mm
Length
6.8mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.916440
$0.91644
10
$0.864566
$8.64566
100
$0.815628
$81.5628
500
$0.769461
$384.7305
1000
$0.725906
$725.906
MJD350-13 Product Details
MJD350-13 Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 500mA volts.
MJD350-13 Features
the DC current gain for this device is 30 @ 50mA 10V the emitter base voltage is kept at 3V
MJD350-13 Applications
There are a lot of Diodes Incorporated MJD350-13 applications of single BJT transistors.