KSH3055TF Overview

DC current gain in this device equals 20 @ 4A 4V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 8V @ 3.3A, 10A.Emitter base voltages of 5V can achieve high levels of efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 2MHz.As a result, it can handle voltages as low as 60V volts.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.

KSH3055TF Features

the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 2MHz

KSH3055TF Applications

There are a lot of ON Semiconductor KSH3055TF applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter