KSH32CTF Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 3A 4V.A collector emitter saturation voltage of -1.2V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.As you can see, the part has a transition frequency of 3MHz.As a result, it can handle voltages as low as 100V volts.Collector current can be as low as 3A volts at its maximum.

KSH32CTF Features

the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 3MHz

KSH32CTF Applications

There are a lot of ON Semiconductor KSH32CTF applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver