KSK30OBU datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
KSK30OBU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Operating Temperature
125°C TJ
Packaging
Bulk
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSK30
Power - Max
100mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
8.2pF @ 0V
Current - Drain (Idss) @ Vds (Vgs=0)
600μA @ 10V
Voltage - Cutoff (VGS off) @ Id
400mV @ 100nA
Voltage - Breakdown (V(BR)GSS)
50V
KSK30OBU Product Details
KSK30OBU Description
N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).