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KSK30OBU

KSK30OBU

KSK30OBU

ON Semiconductor

KSK30OBU datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

KSK30OBU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature 125°C TJ
Packaging Bulk
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSK30
Power - Max 100mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 8.2pF @ 0V
Current - Drain (Idss) @ Vds (Vgs=0) 600μA @ 10V
Voltage - Cutoff (VGS off) @ Id 400mV @ 100nA
Voltage - Breakdown (V(BR)GSS) 50V
KSK30OBU Product Details

KSK30OBU                  Description


N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).



KSK30OBU                 Features


Low Noise PRE-AMP. Use

? High Input Impedance: IGSS=1nA (MAX)

? Low Noise: NF=0.5dB (TYP)

? High Voltage: VGDS= -50V

 

KSK30OBU                  Applications


Desktop PC power supplies for

Next-generation AMD processors

Voltage regulator modules (VRM)

 


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