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KSK596PBWD

KSK596PBWD

KSK596PBWD

ON Semiconductor

KSK596PBWD datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

KSK596PBWD Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Short Body
Supplier Device Package TO-92S
Operating Temperature 150°C TJ
Packaging Bulk
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSK596
Power - Max 100mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 5V
Current - Drain (Idss) @ Vds (Vgs=0) 100μA @ 5V
Voltage - Cutoff (VGS off) @ Id 600mV @ 1μA
Voltage - Breakdown (V(BR)GSS) 20V
Current Drain (Id) - Max 1mA
KSK596PBWD Product Details

KSK596PBWD Description


KSK596PBWD is an N-channel JEFT transistor from the manufacturer ON Semiconductor with the breakdown voltage of 20V. The operating temperature of the KSK596PBWD is 150°C TJ and its maximum power dissipation is 100mW. KSK596PBWD has 3 pins and it is available in Bulk packaging way. The maximum current drain of KSK596PBWD is 1mA.



KSK596PBWD Features


  • Package / Case: TO-226-3, TO-92-3 Short Body

  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V

  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 1μA

  • Current Drain (Id) - Max: 1mA

  • Base Part Number: KSK596



KSK596PBWD Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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