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KSP27TA

KSP27TA

KSP27TA

ON Semiconductor

KSP27TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSP27TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Supplier Device Package TO-92-3
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Max Power Dissipation625mW
Current Rating500mA
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power - Max 625mW
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 500mA
Collector Emitter Saturation Voltage1.5V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 10V
hFE Min 10000
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1651 items

KSP27TA Product Details

KSP27TA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.Supplier device package TO-92-3 comes with the product.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

KSP27TA Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
the supplier device package of TO-92-3

KSP27TA Applications


There are a lot of ON Semiconductor KSP27TA applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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