KSP27TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSP27TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Supplier Device Package
TO-92-3
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
60V
Max Power Dissipation
625mW
Current Rating
500mA
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power - Max
625mW
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
500mA
Collector Emitter Saturation Voltage
1.5V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
10V
hFE Min
10000
RoHS Status
RoHS Compliant
Lead Free
Lead Free
KSP27TA Product Details
KSP27TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.Supplier device package TO-92-3 comes with the product.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
KSP27TA Features
the DC current gain for this device is 10000 @ 100mA 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 100μA, 100mA the emitter base voltage is kept at 10V the current rating of this device is 500mA the supplier device package of TO-92-3
KSP27TA Applications
There are a lot of ON Semiconductor KSP27TA applications of single BJT transistors.