KST3906MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KST3906MTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-200mA
Frequency
250MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
KST3906
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Gain Bandwidth Product
250MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
-400mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Turn On Time-Max (ton)
70ns
Height
970μm
Length
2.9mm
Width
1.3mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.088640
$0.08864
500
$0.065176
$32.588
1000
$0.054314
$54.314
2000
$0.049829
$99.658
5000
$0.046569
$232.845
10000
$0.043320
$433.2
15000
$0.041896
$628.44
50000
$0.041195
$2059.75
KST3906MTF Product Details
KST3906MTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.250MHz is present in the transition frequency.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 200mA volts is possible.
KST3906MTF Features
the DC current gain for this device is 100 @ 10mA 1V a collector emitter saturation voltage of -400mV the vce saturation(Max) is 400mV @ 5mA, 50mA the emitter base voltage is kept at -5V the current rating of this device is -200mA a transition frequency of 250MHz
KST3906MTF Applications
There are a lot of ON Semiconductor KST3906MTF applications of single BJT transistors.