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KST3906MTF

KST3906MTF

KST3906MTF

ON Semiconductor

KST3906MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KST3906MTF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -200mA
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number KST3906
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage -400mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Turn On Time-Max (ton) 70ns
Height 970μm
Length 2.9mm
Width 1.3mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.088640 $0.08864
500 $0.065176 $32.588
1000 $0.054314 $54.314
2000 $0.049829 $99.658
5000 $0.046569 $232.845
10000 $0.043320 $433.2
15000 $0.041896 $628.44
50000 $0.041195 $2059.75
KST3906MTF Product Details

KST3906MTF Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.250MHz is present in the transition frequency.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 200mA volts is possible.

KST3906MTF Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz

KST3906MTF Applications


There are a lot of ON Semiconductor KST3906MTF applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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