MJ11016G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 20A 5V.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 300mA, 30A.A constant collector voltage of 30A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 30A.There is a transition frequency of 4MHz in the part.Maximum collector currents can be below 30A volts.

MJ11016G Features

the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 4MHz

MJ11016G Applications

There are a lot of ON Semiconductor MJ11016G applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter