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MJB41CG

MJB41CG

MJB41CG

ON Semiconductor

MJB41CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJB41CG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 65W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJB41
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Height 4.83mm
Length 10.29mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.674749 $4.674749
10 $4.410140 $44.1014
100 $4.160509 $416.0509
500 $3.925009 $1962.5045
1000 $3.702839 $3702.839
MJB41CG Product Details

MJB41CG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 3A 4V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 6A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Its current rating is 6A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.3MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.

MJB41CG Features


the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz

MJB41CG Applications


There are a lot of ON Semiconductor MJB41CG applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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