KST4403MTF Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -750mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -600mA for this device.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can be broken down at a voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.
KST4403MTF Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
KST4403MTF Applications
There are a lot of ON Semiconductor KST4403MTF applications of single BJT transistors.
- Muting
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- Interface
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- Driver
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- Inverter
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