2SA1695 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Sanken stock available on our website
SOT-23
2SA1695 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
1999
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
100W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 3A 4V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
140V
Current - Collector (Ic) (Max)
10A
Transition Frequency
20MHz
Frequency - Transition
20MHz
Power Dissipation-Max (Abs)
100W
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.645837
$0.645837
10
$0.609280
$6.0928
100
$0.574792
$57.4792
500
$0.542257
$271.1285
1000
$0.511563
$511.563
2SA1695 Product Details
2SA1695 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 3A 4V.A VCE saturation (Max) of 500mV @ 500mA, 5A means Ic has reached its maximum value(saturated).In this part, there is a transition frequency of 20MHz.Single BJT transistor shows a 140V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SA1695 Features
the DC current gain for this device is 50 @ 3A 4V the vce saturation(Max) is 500mV @ 500mA, 5A a transition frequency of 20MHz
2SA1695 Applications
There are a lot of Sanken 2SA1695 applications of single BJT transistors.