MMBT4403-D87Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT4403-D87Z Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
48 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Reach Compliance Code
compliant
Base Part Number
MMBT4403
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
350mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
200MHz
Frequency - Transition
200MHz
Power Dissipation-Max (Abs)
0.225W
Turn Off Time-Max (toff)
255ns
Turn On Time-Max (ton)
35ns
MMBT4403-D87Z Product Details
MMBT4403-D87Z Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.The device has a 40V maximal voltage - Collector Emitter Breakdown.
MMBT4403-D87Z Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 750mV @ 50mA, 500mA a transition frequency of 200MHz
MMBT4403-D87Z Applications
There are a lot of ON Semiconductor MMBT4403-D87Z applications of single BJT transistors.