BD13710S Overview

This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.There is a transition frequency of 250MHz in the part.Maximum collector currents can be below 1.5A volts.

BD13710S Features

the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz

BD13710S Applications

There are a lot of ON Semiconductor BD13710S applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface