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MJD122TF

MJD122TF

MJD122TF

ON Semiconductor

MJD122TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJD122TF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Current Rating 8A
Base Part Number MJD122
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Height 2.3mm
Length 6.6mm
Width 6.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.30435 $0.6087
MJD122TF Product Details

MJD122TF Overview


In this device, the DC current gain is 1000 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 80mA, 8A.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.This device can take an input voltage of 100V volts before it breaks down.Maximum collector currents can be below 8A volts.

MJD122TF Features


the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A

MJD122TF Applications


There are a lot of ON Semiconductor MJD122TF applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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