MJD122TF Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 80mA, 8A.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.This device can take an input voltage of 100V volts before it breaks down.Maximum collector currents can be below 8A volts.
MJD122TF Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
MJD122TF Applications
There are a lot of ON Semiconductor MJD122TF applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
