DNLS160V-7 Overview
DC current gain in this device equals 250 @ 1mA 5V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.270MHz is present in the transition frequency.There is a breakdown input voltage of 60V volts that it can take.Maximum collector currents can be below 1A volts.
DNLS160V-7 Features
the DC current gain for this device is 250 @ 1mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 270MHz
DNLS160V-7 Applications
There are a lot of Diodes Incorporated DNLS160V-7 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
