DNLS160V-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DNLS160V-7 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
3.005049mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
270MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Gain Bandwidth Product
270MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 1mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
270MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
60V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Height
600μm
Length
1.6mm
Width
1.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$16.297440
$16.29744
10
$15.374943
$153.74943
100
$14.504664
$1450.4664
500
$13.683645
$6841.8225
1000
$12.909099
$12909.099
DNLS160V-7 Product Details
DNLS160V-7 Overview
DC current gain in this device equals 250 @ 1mA 5V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.270MHz is present in the transition frequency.There is a breakdown input voltage of 60V volts that it can take.Maximum collector currents can be below 1A volts.
DNLS160V-7 Features
the DC current gain for this device is 250 @ 1mA 5V a collector emitter saturation voltage of 250mV the vce saturation(Max) is 250mV @ 100mA, 1A the emitter base voltage is kept at 5V a transition frequency of 270MHz
DNLS160V-7 Applications
There are a lot of Diodes Incorporated DNLS160V-7 applications of single BJT transistors.