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MMBT2907AT-7

MMBT2907AT-7

MMBT2907AT-7

Diodes Incorporated

MMBT2907AT-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBT2907AT-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Weight 2.012816mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series Automotive, AEC-Q101
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC -60V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating -600mA
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number MMBT2907A
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -1.6V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Continuous Collector Current -600mA
Turn On Time-Max (ton) 45ns
Height 750μm
Length 1.6mm
Width 800μm
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.093120 $0.09312
500 $0.068471 $34.2355
1000 $0.057059 $57.059
2000 $0.052348 $104.696
5000 $0.048923 $244.615
10000 $0.045510 $455.1
15000 $0.044013 $660.195
50000 $0.043278 $2163.9
MMBT2907AT-7 Product Details

MMBT2907AT-7 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.A collector emitter saturation voltage of -1.6V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.Continuous collector voltage should be kept at -600mA for high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 600mA volts.

MMBT2907AT-7 Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz

MMBT2907AT-7 Applications


There are a lot of Diodes Incorporated MMBT2907AT-7 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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