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MMBT2907AT-7

MMBT2907AT-7

MMBT2907AT-7

Diodes Incorporated

MMBT2907AT-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBT2907AT-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Weight 2.012816mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2003
Series Automotive, AEC-Q101
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC -60V
Max Power Dissipation150mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating-600mA
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number MMBT2907A
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation150mW
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-1.6V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Continuous Collector Current -600mA
Turn On Time-Max (ton) 45ns
Height 750μm
Length 1.6mm
Width 800μm
REACH SVHC No SVHC
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:4561 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.093120$0.09312
500$0.068471$34.2355
1000$0.057059$57.059
2000$0.052348$104.696
5000$0.048923$244.615
10000$0.045510$455.1
15000$0.044013$660.195
50000$0.043278$2163.9

MMBT2907AT-7 Product Details

MMBT2907AT-7 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.A collector emitter saturation voltage of -1.6V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.Continuous collector voltage should be kept at -600mA for high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 600mA volts.

MMBT2907AT-7 Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz

MMBT2907AT-7 Applications


There are a lot of Diodes Incorporated MMBT2907AT-7 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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