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BCW30

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BCW30

BCW30

Rochester Electronics, LLC

BCW30 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BCW30 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 350mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 215 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 32V
Current - Collector (Ic) (Max) 500mA
RoHS Status ROHS3 Compliant
BCW30 Product Details

BCW30 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 215 @ 2mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 500μA, 10mA.Single BJT transistor shows a 32V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BCW30 Features


the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA

BCW30 Applications


There are a lot of Rochester Electronics, LLC BCW30 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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