MJD128T4 Overview

In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 80mA, 8A.Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.Maximum collector currents can be below 8A volts.

MJD128T4 Features

the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A

MJD128T4 Applications

There are a lot of ON Semiconductor MJD128T4 applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter