MJD31T4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.An input voltage of 40V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
MJD31T4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31T4G Applications
There are a lot of ON Semiconductor MJD31T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
