MJD47TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJD47TF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 6 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
250V
Max Power Dissipation
1.56W
Terminal Form
GULL WING
Current Rating
1A
Frequency
10MHz
Base Part Number
MJD47
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.56W
Gain Bandwidth Product
10MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA 10V
Current - Collector Cutoff (Max)
200μA
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
250V
Collector Base Voltage (VCBO)
350V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Height
2.38mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.130340
$0.13034
10
$0.122962
$1.22962
100
$0.116002
$11.6002
500
$0.109436
$54.718
1000
$0.103241
$103.241
MJD47TF Product Details
MJD47TF Overview
This device has a DC current gain of 30 @ 300mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).Parts of this part have transition frequencies of 10MHz.Breakdown input voltage is 250V volts.When collector current reaches its maximum, it can reach 1A volts.
MJD47TF Features
the DC current gain for this device is 30 @ 300mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 200mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 10MHz
MJD47TF Applications
There are a lot of ON Semiconductor MJD47TF applications of single BJT transistors.