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MJD47TF

MJD47TF

MJD47TF

ON Semiconductor

MJD47TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJD47TF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 250V
Max Power Dissipation 1.56W
Terminal Form GULL WING
Current Rating 1A
Frequency 10MHz
Base Part Number MJD47
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.56W
Gain Bandwidth Product 10MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA 10V
Current - Collector Cutoff (Max) 200μA
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Collector Emitter Breakdown Voltage 250V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 250V
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.130340 $0.13034
10 $0.122962 $1.22962
100 $0.116002 $11.6002
500 $0.109436 $54.718
1000 $0.103241 $103.241
MJD47TF Product Details

MJD47TF Overview


This device has a DC current gain of 30 @ 300mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).Parts of this part have transition frequencies of 10MHz.Breakdown input voltage is 250V volts.When collector current reaches its maximum, it can reach 1A volts.

MJD47TF Features


the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz

MJD47TF Applications


There are a lot of ON Semiconductor MJD47TF applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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