Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BC858CE6433HTMA1

  • BC858CE6433HTMA1
  • BC858CE6433HTMA1

BC858CE6433HTMA1

BC858CE6433HTMA1

Infineon Technologies

BC858CE6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC858CE6433HTMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC858
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 330mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.046427 $0.046427
10 $0.043799 $0.43799
100 $0.041320 $4.132
500 $0.038981 $19.4905
1000 $0.036775 $36.775
BC858CE6433HTMA1 Product Details

BC858CE6433HTMA1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The part has a transition frequency of 250MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.

BC858CE6433HTMA1 Features


the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz

BC858CE6433HTMA1 Applications


There are a lot of Infineon Technologies BC858CE6433HTMA1 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

Related Part Number

BF722,115
Nexperia USA Inc.
BF722,115
$0 $/piece
BCX70K,215
Nexperia USA Inc.
BCX70K,215
$0 $/piece
2N3906RLRAG
Rochester Electronics, LLC
2N3906RLRAG
$0 $/piece
BC849BW RFG
Taiwan Semiconductor Corporation
BC849BW RFG
$0 $/piece
PBSS4240T,215
Nexperia USA Inc.
PBSS4240T,215
$0 $/piece
PMST3906,135
Nexperia USA Inc.
PMST3906,135
$0 $/piece
MMBT5401LT1G
ON Semiconductor
MMBT5401LT1G
$0 $/piece
JANTXV2N3716
Aeroflex
JANTXV2N3716
$0 $/piece
MMBT2222A-G
Comchip Technology
MMBT2222A-G
$0 $/piece
TN6726A
ON Semiconductor
TN6726A
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News