BC846B-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BC846B-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
65V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
BC846
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.03453
$0.10359
6,000
$0.03138
$0.18828
15,000
$0.02760
$0.414
30,000
$0.02508
$0.7524
75,000
$0.02256
$1.692
150,000
$0.01920
$2.88
BC846B-7-F Product Details
BC846B-7-F Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.As you can see, the part has a transition frequency of 300MHz.Single BJT transistor can be broken down at a voltage of 65V volts.Collector current can be as low as 100mA volts at its maximum.
BC846B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 600mV @ 5mA, 100mA the emitter base voltage is kept at 6V the current rating of this device is 100mA a transition frequency of 300MHz
BC846B-7-F Applications
There are a lot of Diodes Incorporated BC846B-7-F applications of single BJT transistors.