TSC742CZ C0G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
TSC742CZ C0G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Power - Max
70W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
48 @ 100mA 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 3.5A
Voltage - Collector Emitter Breakdown (Max)
420V
Current - Collector (Ic) (Max)
5A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
TSC742CZ C0G Product Details
TSC742CZ C0G Overview
DC current gain in this device equals 48 @ 100mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 3.5A.TO-220 is the supplier device package for this product.Single BJT transistor shows a 420V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
TSC742CZ C0G Features
the DC current gain for this device is 48 @ 100mA 5V the vce saturation(Max) is 1.5V @ 1A, 3.5A the supplier device package of TO-220
TSC742CZ C0G Applications
There are a lot of Taiwan Semiconductor Corporation TSC742CZ C0G applications of single BJT transistors.