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TSC742CZ C0G

TSC742CZ C0G

TSC742CZ C0G

Taiwan Semiconductor Corporation

TSC742CZ C0G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

TSC742CZ C0G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Operating Temperature 150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Power - Max 70W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 48 @ 100mA 5V
Current - Collector Cutoff (Max) 250μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 3.5A
Voltage - Collector Emitter Breakdown (Max) 420V
Current - Collector (Ic) (Max) 5A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
TSC742CZ C0G Product Details

TSC742CZ C0G Overview


DC current gain in this device equals 48 @ 100mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 3.5A.TO-220 is the supplier device package for this product.Single BJT transistor shows a 420V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

TSC742CZ C0G Features


the DC current gain for this device is 48 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the supplier device package of TO-220

TSC742CZ C0G Applications


There are a lot of Taiwan Semiconductor Corporation TSC742CZ C0G applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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