Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MJE15034G

MJE15034G

MJE15034G

ON Semiconductor

MJE15034G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE15034G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 350V
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 350V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 9.28mm
Length 10.28mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.42000 $1.42
50 $1.20900 $60.45
100 $0.99950 $99.95
500 $0.83192 $415.96
1,000 $0.66434 $0.66434
MJE15034G Product Details

MJE15034G Overview


In this device, the DC current gain is 10 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In the part, the transition frequency is 30MHz.Collector current can be as low as 4A volts at its maximum.

MJE15034G Features


the DC current gain for this device is 10 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 30MHz

MJE15034G Applications


There are a lot of ON Semiconductor MJE15034G applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

Related Part Number

JAN2N2218
CENW42
PBSS4360XF
PBSS4360XF
$0 $/piece
PN3646
MMBT3904VL
MMBT3904VL
$0 $/piece
2SCR341QTR
BC847ALT1G
BC847ALT1G
$0 $/piece
2SA1909
2SA1909
$0 $/piece
TIP31C-BP

Get Subscriber

Enter Your Email Address, Get the Latest News