PBSS4360XF

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Manufacturer part number:PBSS4360XF

Manufacturer:Nexperia USA Inc.

Description:PBSS4360XF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:PBSS4360XF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	TO-243AA
Operating Temperature	-55°C~150°C TA
Packaging	Tape & Reel (TR)
Published	2017
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Pin Count	3
Power - Max	1.35W
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1A 5V
Current - Collector Cutoff (Max)	100nA
Vce Saturation (Max) @ Ib, Ic	400mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	3A
Frequency - Transition	75MHz
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.128450	$0.12845
10	$0.121179	$1.21179
100	$0.114320	$11.432
500	$0.107849	$53.9245
1000	$0.101745	$101.745

PBSS4360XF Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1A 5V.A VCE saturation (Max) of 400mV @ 300mA, 3A means Ic has reached its maximum value(saturated).Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.