BC847ALT1G Overview

DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 45V volts.Maximum collector currents can be below 100mA volts.

BC847ALT1G Features

the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz

BC847ALT1G Applications

There are a lot of ON Semiconductor BC847ALT1G applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver