MPSW51AG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 100mA 1V.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).As a result, the part has a transition frequency of 50MHz.When collector current reaches its maximum, it can reach 1A volts.
MPSW51AG Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz
MPSW51AG Applications
There are a lot of ON Semiconductor MPSW51AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
