BSP 60 E6433 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BSP 60 E6433 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Base Part Number
BSP60
Power - Max
1.5W
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
200MHz
Power Dissipation-Max (Abs)
1.5W
RoHS Status
Non-RoHS Compliant
BSP 60 E6433 Product Details
BSP 60 E6433 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1mA, 1A.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.
BSP 60 E6433 Features
the DC current gain for this device is 2000 @ 500mA 10V the vce saturation(Max) is 1.8V @ 1mA, 1A
BSP 60 E6433 Applications
There are a lot of Infineon Technologies BSP 60 E6433 applications of single BJT transistors.