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BSP 60 E6433

BSP 60 E6433

BSP 60 E6433

Infineon Technologies

BSP 60 E6433 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BSP 60 E6433 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface MountYES
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2010
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Base Part Number BSP60
Power - Max 1.5W
Polarity/Channel Type PNP
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 200MHz
Power Dissipation-Max (Abs) 1.5W
RoHS StatusNon-RoHS Compliant
In-Stock:4622 items

BSP 60 E6433 Product Details

BSP 60 E6433 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1mA, 1A.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.

BSP 60 E6433 Features


the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A

BSP 60 E6433 Applications


There are a lot of Infineon Technologies BSP 60 E6433 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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