NSS40601CF8T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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NSS40601CF8T1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Surface Mount
YES
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.4W
Terminal Position
DUAL
Terminal Form
C BEND
Frequency
140MHz
Base Part Number
NSS40601
Pin Count
8
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Power - Max
830mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
140MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
135mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
140MHz
Collector Emitter Saturation Voltage
135mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Turn On Time-Max (ton)
240ns
Height
1.1mm
Length
3.1mm
Width
1.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.873000
$0.873
10
$0.823585
$8.23585
100
$0.776967
$77.6967
500
$0.732988
$366.494
1000
$0.691498
$691.498
NSS40601CF8T1G Product Details
NSS40601CF8T1G Overview
This device has a DC current gain of 200 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 135mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 135mV @ 400mA, 4A.Emitter base voltages of 6V can achieve high levels of efficiency.A transition frequency of 140MHz is present in the part.An input voltage of 40V volts is the breakdown voltage.A maximum collector current of 6A volts is possible.
NSS40601CF8T1G Features
the DC current gain for this device is 200 @ 1A 2V a collector emitter saturation voltage of 135mV the vce saturation(Max) is 135mV @ 400mA, 4A the emitter base voltage is kept at 6V a transition frequency of 140MHz
NSS40601CF8T1G Applications
There are a lot of ON Semiconductor NSS40601CF8T1G applications of single BJT transistors.