MJE5730 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 10MHz in the part.A maximum collector current of 1A volts can be achieved.

MJE5730 Features

the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz

MJE5730 Applications

There are a lot of ON Semiconductor MJE5730 applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter