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MJE5731

MJE5731

MJE5731

ON Semiconductor

MJE5731 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE5731 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 10 hours ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2006
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
HTS Code8541.29.00.95
Subcategory Other Transistors
Voltage - Rated DC -350V
Max Power Dissipation40W
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating1A
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product10MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA 10V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Collector Emitter Breakdown Voltage350V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage1V
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:2160 items

MJE5731 Product Details

MJE5731 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 300mA 10V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).As a result, the part has a transition frequency of 10MHz.A maximum collector current of 1A volts is possible.

MJE5731 Features


the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz

MJE5731 Applications


There are a lot of ON Semiconductor MJE5731 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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