MJW18020G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MJW18020G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
450V
Max Power Dissipation
250W
Peak Reflow Temperature (Cel)
260
Current Rating
20A
Frequency
13MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
250W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
13MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1kV
Max Collector Current
30A
DC Current Gain (hFE) (Min) @ Ic, Vce
14 @ 3A 5V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-247AD
Vce Saturation (Max) @ Ib, Ic
1.5V @ 4A, 20A
Collector Emitter Breakdown Voltage
450V
Transition Frequency
13MHz
Collector Emitter Saturation Voltage
1.15V
Max Breakdown Voltage
150V
Collector Base Voltage (VCBO)
1kV
Emitter Base Voltage (VEBO)
9V
hFE Min
14
Height
21.08mm
Length
16.26mm
Width
5.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.38000
$7.38
30
$6.39133
$191.7399
120
$5.58317
$669.9804
510
$4.89488
$2496.3888
MJW18020G Product Details
MJW18020G Overview
In this device, the DC current gain is 14 @ 3A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 1.15V, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 4A, 20A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (20A).As a result, the part has a transition frequency of 13MHz.Input voltage breakdown is available at 150V volts.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJW18020G Features
the DC current gain for this device is 14 @ 3A 5V a collector emitter saturation voltage of 1.15V the vce saturation(Max) is 1.5V @ 4A, 20A the emitter base voltage is kept at 9V the current rating of this device is 20A a transition frequency of 13MHz
MJW18020G Applications
There are a lot of ON Semiconductor MJW18020G applications of single BJT transistors.