2SD2701TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SD2701TL Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
12V
Max Power Dissipation
800mW
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Current Rating
2A
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2701
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
800mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
140mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Continuous Collector Current
2A
Height
770μm
Length
2mm
Width
1.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.373652
$4.373652
10
$4.126087
$41.26087
100
$3.892535
$389.2535
500
$3.672202
$1836.101
1000
$3.464342
$3464.342
2SD2701TL Product Details
2SD2701TL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.A collector emitter saturation voltage of 140mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 50mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 300MHz is present in the part.The breakdown input voltage is 12V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SD2701TL Features
the DC current gain for this device is 270 @ 100mA 2V a collector emitter saturation voltage of 140mV the vce saturation(Max) is 350mV @ 50mA, 1A the emitter base voltage is kept at 6V the current rating of this device is 2A a transition frequency of 300MHz
2SD2701TL Applications
There are a lot of ROHM Semiconductor 2SD2701TL applications of single BJT transistors.