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2SD2701TL

2SD2701TL

2SD2701TL

ROHM Semiconductor

2SD2701TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

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2SD2701TL Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC 12V
Max Power Dissipation 800mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2701
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 800mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 140mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Continuous Collector Current 2A
Height 770μm
Length 2mm
Width 1.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.373652 $4.373652
10 $4.126087 $41.26087
100 $3.892535 $389.2535
500 $3.672202 $1836.101
1000 $3.464342 $3464.342
2SD2701TL Product Details

2SD2701TL Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.A collector emitter saturation voltage of 140mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 50mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 300MHz is present in the part.The breakdown input voltage is 12V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SD2701TL Features


the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 300MHz

2SD2701TL Applications


There are a lot of ROHM Semiconductor 2SD2701TL applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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