NSV60601MZ4T1G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1A 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 85mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 300mV @ 600mA, 6A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.100MHz is present in the transition frequency.The maximum collector current is 6A volts.

NSV60601MZ4T1G Features

the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of 85mV
the vce saturation(Max) is 300mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

NSV60601MZ4T1G Applications

There are a lot of ON Semiconductor NSV60601MZ4T1G applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver