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MMBF5484LT1

MMBF5484LT1

MMBF5484LT1

ON Semiconductor

MMBF5484LT1 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

MMBF5484LT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Package / Case SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC 25V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 10mA
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Operating Temperature (Min) -55°C
Number of Elements 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 200mW
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 25V
Polarity/Channel Type N-CHANNEL
Gate to Source Voltage (Vgs) 25V
Input Capacitance 5pF
FET Technology JUNCTION
Feedback Cap-Max (Crss) 1 pF
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
MMBF5484LT1 Product Details

MMBF5484LT1 Description

 

MMBF5484LT1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MMBF5484LT1 MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor MMBF5484LT1 has the common source configuration.

 

 

MMBF5484LT1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

MMBF5484LT1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

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