MMBT2222AT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT2222AT Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-89, SOT-490
Number of Pins
3
Supplier Device Package
SOT-523F
Weight
30mg
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Frequency
300MHz
Base Part Number
MMBT2222
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
250mW
Power - Max
250mW
Gain Bandwidth Product
300MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 1V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
600mA
Max Frequency
100MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
40V
Frequency - Transition
300MHz
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
hFE Min
75
Height
780μm
Length
1.7mm
Width
980μm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.06182
$0.18546
6,000
$0.05376
$0.32256
15,000
$0.04570
$0.6855
30,000
$0.04301
$1.2903
75,000
$0.04032
$3.024
150,000
$0.03584
$5.376
MMBT2222AT Product Details
MMBT2222AT Overview
This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1V ensures maximum design flexibility.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device can take an input voltage of 40V volts before it breaks down.Product comes in SOT-523F supplier package.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.When collector current reaches its maximum, it can reach 600mA volts.
MMBT2222AT Features
the DC current gain for this device is 100 @ 150mA 1V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 50mA, 500mA the emitter base voltage is kept at 6V the supplier device package of SOT-523F
MMBT2222AT Applications
There are a lot of ON Semiconductor MMBT2222AT applications of single BJT transistors.