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MMBT2222AT

MMBT2222AT

MMBT2222AT

ON Semiconductor

MMBT2222AT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT2222AT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Supplier Device Package SOT-523F
Weight 30mg
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 250mW
Frequency 300MHz
Base Part Number MMBT2222
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 250mW
Power - Max 250mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Max Frequency 100MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 40V
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 75
Height 780μm
Length 1.7mm
Width 980μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.06182 $0.18546
6,000 $0.05376 $0.32256
15,000 $0.04570 $0.6855
30,000 $0.04301 $1.2903
75,000 $0.04032 $3.024
150,000 $0.03584 $5.376
MMBT2222AT Product Details

MMBT2222AT Overview


This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1V ensures maximum design flexibility.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device can take an input voltage of 40V volts before it breaks down.Product comes in SOT-523F supplier package.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.When collector current reaches its maximum, it can reach 600mA volts.

MMBT2222AT Features


the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-523F

MMBT2222AT Applications


There are a lot of ON Semiconductor MMBT2222AT applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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