MMBT2222AT Overview
This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1V ensures maximum design flexibility.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device can take an input voltage of 40V volts before it breaks down.Product comes in SOT-523F supplier package.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.When collector current reaches its maximum, it can reach 600mA volts.
MMBT2222AT Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-523F
MMBT2222AT Applications
There are a lot of ON Semiconductor MMBT2222AT applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
