MMBT2222ATT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 300MHz is present in the part.This device can take an input voltage of 40V volts before it breaks down.In extreme cases, the collector current can be as low as 600mA volts.
MMBT2222ATT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
MMBT2222ATT1G Applications
There are a lot of ON Semiconductor MMBT2222ATT1G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
