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MJD340G

  • MJD340G
  • MJD340G

MJD340G

MJD340G

ON Semiconductor

MJD340G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJD340G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 300V
Max Power Dissipation 15W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJD340
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.56W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage 300V
Max Frequency 10MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 3V
hFE Min 30
Height 2.3876mm
Length 6.7056mm
Width 6.223mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.57000 $0.57
75 $0.45760 $34.32
150 $0.36600 $54.9
525 $0.28760 $150.99
1,050 $0.22223 $0.22223
MJD340G Product Details

MJD340G Overview


In this device, the DC current gain is 30 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.Keeping the emitter base voltage at 3V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).The maximum collector current is 500mA volts.

MJD340G Features


the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 3V
the current rating of this device is 500mA

MJD340G Applications


There are a lot of ON Semiconductor MJD340G applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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